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MX29LV800T/B & MX29LV800AT/AB
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
* Ready/Busy pin (RY/BY) - Provides a hardware method of detecting program or erase operation completion. * Sector protection - Hardware method to disable any combination of sectors from program or erase operations - Temporary sector unprotected allows code changes in previously locked sectors. * CFI (Common Flash Interface) compliant (for MX29LV800AT/AB) - Flash device parameters stored on the device and provide the host system to access * 100,000 minimum erase/program cycles * Latch-up protected to 100mA from -1V to VCC+1V * Boot Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector * Package type: - 44-pin SOP - 48-pin TSOP - 48-pin CSP (8x9mm for MX29LV800T/B; 6x8mm for MX29LV800AT/AB) * Compatibility with JEDEC standard - Pinout and software compatible with single-power supply Flash * 20 years data retention ister allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29LV800T/B & MX29LV800AT/AB uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamperes on address and data pin from -1V to VCC + 1V. Part Name Difference MX29LV800T/B 1.Without CFI compliant 2. CSP dimension:8x9mm MX29LV800AT/AB 1.With CFI compliant 2. CSP dimension:6x8mm
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FEATURES
* Extended single - supply voltage range 2.7V to 3.6V * 1,048,576 x 8/524,288 x 16 switchable * Single power supply operation - 3.0V only operation for read, erase and program operation * Fast access time: 70/90ns * Low power consumption - 20mA maximum active current - 0.2uA typical standby current * Command register architecture - Byte/word Programming (9us/11us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15) * Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability. - Automatically program and verify data at specified address * Erase suspend/Erase Resume - Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase. * Status Reply - Data polling & Toggle bit for detection of program and erase operation completion.
GENERAL DESCRIPTION
The MX29LV800T/B & MX29LV800AT/AB is a 8-mega bit Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV800T/B & MX29LV800AT/AB is packaged in 44-pin SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29LV800T/B & MX29LV800AT/AB offers access time as fast as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV800T/B & MX29LV800AT/AB has separate chip enable (CE) and output enable (OE) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29LV800T/B & MX29LV800AT/AB uses a command register to manage this functionality. The command regP/N:PM0709
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MX29LV800T/B & MX29LV800AT/AB
PIN CONFIGURATIONS
44 SOP(500 mil)
RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RESET WE A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC
PIN DESCRIPTION
SYMBOL A0~A18 Q0~Q14 Q15/A-1 CE WE BYTE RESET OE RY/BY VCC GND PIN NAME Address Input Data Input/Output Q15(Word mode)/LSB addr(Byte mode) Chip Enable Input Write Enable Input Word/Byte Selection input Hardware Reset Pin Output Enable Input Ready/Busy Output Power Supply Pin (2.7V~3.6V) Ground Pin
48 TSOP (Standard Type) (12mm x 20mm)
A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RESET NC NC RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OE GND CE A0
MX29LV800T/B, MX29LV800AT/AB
MX29LV800T/B, MX29LV800AT/AB
48-Ball CSP Ball Pitch = 0.8 mm, Top View, Balls Facing Down (8mm x 9mm for MX29LV800T/B and 6mm x 8mm for MX29LV800AT/AB) A 6 5 4 3 2 1 A13 A9 WE RY/BY A7 A3 B A12 A8 RESET NC A17 A4 C A14 A10 NC A18 A6 A2 D A15 A11 NC NC A5 A1 E A16 Q7 Q5 Q2 Q0 A0 F BYTE Q14 Q12 Q10 Q8 CE G H
Q15/A-1 GND Q13 Vcc Q11 Q9 OE Q6 Q4 Q3 Q1 GND
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BLOCK STRUCTURE TABLE 1: MX29LV800T/MX29LV800AT SECTOR ARCHITECTURE
Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 Sector Size Byte Mode Word Mode 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 32Kbytes 8Kbytes 8Kbytes 16Kbytes 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 16Kwords 4Kwords 4Kwords 8Kwords Address range Byte Mode (x8) 00000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-7FFFFh 80000h-8FFFFh 90000h-9FFFFh A0000h-AFFFFh B0000h-BFFFFh C0000h-CFFFFh D0000h-DFFFFh E0000h-EFFFFh F0000h-F7FFFh F8000h-F9FFFh FA000h-FBFFFh FC000h-FFFFFh Word Mode (x16) 00000h-07FFFh 08000h-0FFFFh 10000h-17FFFh 18000h-1FFFFh 20000h-27FFFh 28000h-2FFFFh 30000h-37FFFh 38000h-3FFFFh 40000h-47FFFh 48000h-4FFFFh 50000h-57FFFh 58000h-5FFFFh 60000h-67FFFh 68000h-6FFFFh 70000h-77FFFh 78000h-7BFFFh 7C000h-7CFFFh 7D000h-7DFFFh 7E000h-7FFFFh 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 Sector Address A18 A17 A16 A15 A14 A13 A12 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 1 X X X X X X X X X X X X X X X 0 1 1 1 X X X X X X X X X X X X X X X X 0 0 1 X X X X X X X X X X X X X X X X 0 1 X
Note: Byte mode:address range A18:A-1, word mode:address range A18:A0.
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TABLE 2: MX29LV800B/MX29LV800AB SECTOR ARCHITECTURE
Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 Sector Size Byte Mode Word Mode 16Kbytes 8Kbytes 8Kbytes 32Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 8Kwords 4Kwords 4Kwords 16Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords Address range Byte Mode (x8) 00000h-03FFFh 04000h-05FFFh 06000h-07FFFh 08000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-7FFFFh 80000h-8FFFFh 90000h-9FFFFh A0000h-AFFFFh B0000h-BFFFFh C0000h-CFFFFh D0000h-DFFFFh E0000h-EFFFFh F0000h-FFFFFh Word Mode (x16) 00000h-01FFFh 02000h-02FFFh 03000h-03FFFh 04000h-07FFFh 08000h-0FFFFh 10000h-17FFFh 18000h-1FFFFh 20000h-27FFFh 28000h-2FFFFh 30000h-37FFFh 38000h-3FFFFh 40000h-47FFFh 48000h-4FFFFh 50000h-57FFFh 58000h-5FFFFh 60000h-67FFFh 68000h-6FFFFh 70000h-77FFFh 78000h-7FFFFh 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 Sector Address A18 A17 A16 A15 A14 A13 A12 0 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 0 0 1 X X X X X X X X X X X X X X X 0 1 1 X X X X X X X X X X X X X X X X X 0 1 X X X X X X X X X X X X X X X X
Note: Byte mode:address range A18:A-1, word mode:address range A18:A0.
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BLOCK DIAGRAM
CE OE WE RESET
CONTROL INPUT LOGIC
PROGRAM/ERASE HIGH VOLTAGE
WRITE STATE MACHINE (WSM)
STATE
MX29LV800T/B, MX29LV800AT/AB
X-DECODER
REGISTER
ARRAY SOURCE HV
ADDRESS LATCH
A0-A18
FLASH ARRAY
Y-PASS GATE
AND BUFFER
COMMAND DATA DECODER
Y-DECODER
SENSE AMPLIFIER
PGM DATA HV
COMMAND DATA LATCH
PROGRAM DATA LATCH
Q0-Q15/A-1
I/O BUFFER
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AUTOMATIC PROGRAMMING
The MX29LV800T/B & MX29LV800AT/AB is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not need to have time out sequence nor to verify the data programmed. The typical chip programming time at room temperature of the MX29LV800T/ B & MX29LV800AT/AB is less than 10 seconds.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to write commands to the command register using standard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the status of the erasing operation. Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of WE or CE, whichever happens first. MXIC's Flash technology combines years of EPROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX29LV800T/B & MX29LV800AT/AB electrically erases all bits simultaneously using Fowler-Nordheim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injection. During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. During a Sector Erase cycle, the command register will only respond to Erase Suspend command. After Erase Suspend is completed, the device stays in read mode. After the state machine has completed its task, it will allow the command register to respond to its full command set.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the user to only write program set-up commands (including 2 unlock write cycle and A0H) and a program command (program data and address). The device automatically times the programming pulse width, provides the program verification, and counts the number of sequences. The device provides an unlock bypass mode with faster programming. Only two write cycles are needed to program a word or byte, instead of four. A status bit similar to DATA polling and a status bit toggling between consecutive read cycles, provide feedback to the user as to the status of the programming operation. Refer to write operation status, table 8, for more information on these status bits.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses according to MXIC's Automatic Chip Erase algorithm. Typical erasure at room temperature is accomplished in less than 25 second. The Automatic Erase algorithm automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device.
AUTOMATIC SELECT AUTOMATIC SECTOR ERASE
The MX29LV800T/B & MX29LV800AT/AB is sector(s) erasable using MXIC's Auto Sector Erase algorithm. The Automatic Sector Erase algorithm automatically programs the specified sector(s) prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device. An erase operation can erase one sector, multiple sectors, or the entire device. The auto select mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on Q7~Q0. This mode is mainly adapted for programming equipment on the device to be programmed with its programming algorithm. When programming by high voltage method, automatic select mode requires VID (11.5V to 12.5V) on address pin A9 and other address pin A6, A1 and A0 as referring to Table 3. In addition, to access the automatic select codes in-system, the host can issue the automatic se-
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lect command through the command register without requiring VID, as shown in table 5. To verify whether or not sector being protected, the sector address must appear on the appropriate highest order address bit (see Table 1 and Table 2). The rest of address bits, as shown in table 3, are don't care. Once all necessary bits have been set as required, the programming equipment may read the corresponding identifier code on Q7~Q0.
TABLE 3. MX29LV800T/B & MX29LV800AT/AB AUTO SELECT MODE OPERATION
A18 A11 Description Manufacturer Code Read ID Device ID Device ID (Bottom Boot Block) Sector Protection Verification Word Byte Word Byte Silicon (Top Boot Block) Mode CE L L L L L L OE L L L L L L WE H H H H H H | X X X X X SA | X X X X X X VID VID VID VID VID VID A12 A10 A9 A8 | A7 X X X X X X L L L L L L A6 A5 A1 A0 | A2 X X X X X X L L L L L H L H H H H L C2H 22DAH XXDAH 225BH XX5BH XX01H (protected) XX00H (unprotected) NOTE:SA=Sector Address, X=Don't Care, L=Logic Low, H=Logic High Q15~Q0
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QUERY COMMAND AND COMMON FLASH INTERFACE (CFI) MODE ( for MX29LV800AT/ AB)
MX29LV800AT/AB is capable of operating in the CFI mode. This mode all the host system to determine the manufacturer of the device such as operating parameters and configuration. Two commands are required in CFI mode. Query command of CFI mode is placed first, then the Reset command exits CFI mode. These are
described in Table 6. The single cycle Query command is valid only when the device is in the Read mode, including Erase Suspend, Standby mode, and Read ID mode; however, it is ignored otherwise. The Reset command exits from the CFI mode to the Read mode, or Erase Suspend mode, or read ID mode. The command is valid only when the device is in the CFI mode.
TABLE 4-1. CFI mode: Identification Data Values
(All values in these tables are in hexadecimal) Description Address (Byte Mode) Query-unique ASCII string "QRY" 20 22 24 Primary vendor command set and control interface ID code 26 28 Address for primary algorithm extended query table 2A 2C Alternate vendor command set and control interface ID code (none) 2E 30 Address for secondary algorithm extended query table (none) 32 34 Address (Word Mode) 10 11 12 13 14 15 16 17 18 19 1A Data 0051 0052 0059 0002 0000 0040 0000 0000 0000 0000 0000
TABLE 4-2. CFI Mode: System Interface Data Values
(All values in these tables are in hexadecimal) Description VCC supply, minimum (2.7V) VCC supply, maximum (3.6V) VPP supply, minimum (none) VPP supply, maximum (none) Typical timeout for single word/byte write (2N us) Typical timeout for Minimum size buffer write (2N us) Typical timeout for individual block erase (2N ms) Typical timeout for full chip erase (2N ms) Maximum timeout for single word/byte write times (2N X Typ) Maximum timeout for buffer write times (2N X Typ) Maximum timeout for individual block erase times (2N X Typ) Maximum timeout for full chip erase times (not supported)
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Address (Byte Mode) 36 38 3A 3C 3E 40 42 44 46 48 4A 4C
Address (Word Mode) 1B 1C 1D 1E 1F 20 21 22 23 24 25 26
Data 0027 0036 0000 0000 0004 0000 000A 0000 0005 0000 0004 0000
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TABLE 4-3. CFI Mode: Device Geometry Data Values
(All values in these tables are in hexadecimal) Description Device size (2N bytes) Flash device interface code (refer to the CFI publication 100) Maximum number of bytes in multi-byte write (not supported) Number of erase block regions Erase block region 1 information (refer to the CFI publication 100) Address (Byte Mode) 4E 50 52 54 56 58 5A 5C 5E 60 62 64 66 68 6A 6C 6E 70 72 74 76 78 Address (Word Mode) 27 28 29 2A 2B 2C 2D 2E 2F 30 31 32 33 34 35 36 37 38 39 3A 3B 3C Data 0014 0002 0000 0000 0000 0004 0000 0000 0040 0000 0001 0000 0020 0000 0000 0000 0080 0000 001E 0000 0000 0001
Erase block region 2 information
Erase block region 3 information
Erase block region 4 information
TABLE 4-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values
(All values in these tables are in hexadecimal) Description Query-unique ASCII string "PRI" Address (Byte Mode) 80 82 84 86 88 8A 8C 8E 90 92 94 96 98 Address (Word Mode) 40 41 42 43 44 45 46 47 48 49 4A 4B 4C Data 0050 0052 0049 0031 0030 0000 0002 0001 0001 0004 0000 0000 0000
Major version number, ASCII Minor version number, ASCII Address sensitive unlock (0=required, 1= not required) Erase suspend (2= to read and write) Sector protect (N= # of sectors/group) Temporary sector unprotected (1=supported) Sector protect/unprotected scheme Simultaneous R/W operation (0=not supported) Burst mode type (0=not supported) Page mode type (0=not supported)
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TABLE 5. MX29LV800T/B & MX29LV800AT/AB COMMAND DEFINITIONS
Command Bus First Bus Cycle Second Bus Cycle Third Bus Cycle Fourth Bus Cycle Data Fifth Bus Cycle Addr Sixth Bus Cycle Data Addr Data
Cycle Addr Reset Read Read Silicon ID Word Byte Sector Protect Verify Byte 4 Word 1 1 4 4 4
Data Addr
Data Addr
Data Addr
XXXH F0H RA RD 55H 55H 55H 555H AAAH 555H 90H ADI 90H ADI 90H (SA) x02H AAAH AAH 555H 55H AAAH 90H (SA) x04H DDI DDI XX00H XX01H 00H 01H PD PD 2AAH 55H 555H 55H 2AAH 55H 555H 55H 555H 10H AAAH 10H SA SA 30H 30H
555H AAH 2AAH AAAH AAH 555H 555H AAH 2AAH
Program
Word Byte
4 4 6 6 6 6 1 1 1 1
555H AAH 2AAH AAAH AAH 555H 555H AAH 2AAH AAAH AAH 555H 555H AAH 2AAH AAAH AAH 555H XXXH B0H XXXH 30H 555H 98 AAAH 98
55H 55H 55H 55H 55H 55H
555H AAAH 555H AAAH 555H AAAH
A0H PA A0H PA
Chip Erase
Word Byte
80H 555H AAH 80H AAAH AAH 80H 555H AAH 80H AAAH AAH
Sector Erase
Word Byte
Sector Erase Suspend Sector Erase Resume CFI Query (for Word
29LV160AT/AB) Byte
Note: 1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A18=do not care. (Refer to table 3) DDI = Data of Device identifier : C2H for manufacture code, 22DA/DA(Top), and 225B/5B(Bottom) for device code. X = X can be VIL or VIH RA=Address of memory location to be read. RD=Data to be read at location RA. 2. PA = Address of memory location to be programmed. PD = Data to be programmed at location PA. SA = Address of the sector to be erased. 3. The system should generate the following address patterns: 555H or 2AAH to Address A10~A0 in word mode/AAAH or 555H to Address A10~A-1 in byte mode. Address bit A11~A18=X=Don't care for all address commands except for Program Address (PA) and Sector Address (SA). Write Sequence may be initiated with A11~A18 in either state. 4. For Sector Protect Verify operation: If read out data is 01H, it means the sector has been protected. If read out data is 00H, it means the sector is still not being protected. 5. Any number of CF1 data read cycle are permitted.
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COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. Table 5 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress.
TABLE 6. MX29LV800T/B & MX29LV800AT/AB BUS OPERATION
ADDRESS DESCRIPTION CE OE WE A18 A10 A9 A8 A12 A11 Read L L H A7 AIN A6 A5 A1 A2 Dout A0 Q0~Q7 Q8~Q15 BYTE =VIH Dout BYTE =VIL =High Z DQ15=A-1 Write Reset Temporary sector unlock Output Disable Standby Sector Protect Sector Unprotected Sector Protection Verify L X X L Vcc 0.3V L L L H X X H X H H L L X X H X L L H SA X SA X X X X AIN X AIN X X X X L H L X X X H H H L L L DIN(3) High Z DIN High Z High Z DIN DIN CODE(5) DIN High Z DIN High Z High Z X X X High Z High Z High Z High Z X X X
X VID X
NOTES: 1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 5. 2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V. 3. Refer to Table 5 for valid Data-In during a write operation. 4. X can be VIL or VIH. 5. Code=00H/XX00H means unprotected. Code=01H/XX01H means protected. 6. A18~A12=Sector address for sector protect. 7. The sector protect and chip unprotected functions may also be implemented via programming equipment.
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REQUIREMENTS FOR READING ARRAY DATA
To read array data from the outputs, the system must drive the CE and OE pins to VIL. CE is the power control and selects the device. OE is the output control and gates array data to the output pins. WE should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid address on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered.
Sequence section for more information. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The "AC Characteristics" section contains timing specification table and timing diagrams for write operations.
STANDBY MODE
When using both pins of CE and RESET, the device enter CMOS Standby with both pins held at Vcc 0.3V. IF CE and RESET are held at VIH, but not within the range of VCC 0.3V, the device will still be in the standby mode, but the standby current will be larger. During Auto Algorithm operation, Vcc active current (Icc2) is required even CE = "H" until the operation is completed. The device can be read with standard access time (tCE) from either of these standby modes, before it is ready to read data.
WRITE COMMANDS/COMMAND SEQUENCES
To program data to the device or erase sectors of memory , the system must drive WE and CE to VIL, and OE to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a byte, instead of four. The "byte Program Command Sequence" section has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors , or the entire device. Table indicates the address space that each sector occupies. A "sector address" consists of the address bits required to uniquely select a sector. The "Writing specific address and data commands or sequences into the command register initiates device operations. Table 1 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. Section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on Q7-Q0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode and Autoselect Command
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OUTPUT DISABLE
With the OE input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins to be in a high impedance state.
RESET OPERATION
The RESET pin provides a hardware method of resetting the device to reading array data. When the RESET pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity Current is reduced for the duration of the RESET pulse. When RESET is held at VSS0.3V, the device draws CMOS standby current (ICC4). If RESET is held at VIL but not within VSS0.3V, the standby current will be greater. The RESET pin may be tied to system reset circuitry. A system reset would that also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory.
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If RESET is asserted during a program or erase operation, the RY/BY pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY to determine whether the reset operation is complete. If RESET is asserted when a program or erase operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET pin returns to VIH. Refer to the AC Characteristics tables for RESET parameters and to Figure 22 for the timing diagram.
SET-UP AUTOMATIC CHIP/SECTOR ERASE COMMANDS
Chip erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "set-up" command 80H. Two more "unlock" write cycles are then followed by the chip erase command 10H or sector erase command 30H. The Automatic Chip Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Chip Erase. Upon executing the Automatic Chip Erase, the device will automatically program and verify the entire memory for an all-zero data pattern. When the device is automatically verified to contain an all-zero pattern, a self-timed chip erase and verify begin. The erase and verify operations are completed when the data on Q7 is "1" at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations. When using the Automatic Chip Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verification command is required). If the Erase operation was unsuccessful, the data on Q5 is "1" (see Table 8), indicating the erase operation exceed internal timing limit. The automatic erase begins on the rising edge of the last WE or CE pulse, whichever happens first in the command sequence and terminates when the data on Q7 is "1" at which time the device returns to the Read mode, or the data on Q6 stops toggling for two consecutive read cycles at which time the device returns to the Read mode.
READ/RESET COMMAND
The read or reset operation is initiated by writing the read/reset command sequence into the command register. Microprocessor read cycles retrieve array data. The device remains enabled for reads until the command register contents are altered. If program-fail or erase-fail happen, the write of F0H will reset the device to abort the operation. A valid command must then be written to place the device in the desired state.
SILICON-ID READ COMMAND
Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the device resides in the target system. PROM programmers typically access signature codes by raising A9 to a high voltage (VID). However, multiplexing high voltage onto address lines is not generally desired system design practice. The MX29LV800T/B & MX29LV800AT/AB contains a Silicon-ID-Read operation to supple traditional PROM programming methodology. The operation is initiated by writing the read silicon ID command sequence into the command register. Following the command write, a read cycle with A1=VIL, A0=VIL retrieves the manufacturer code of C2H/00C2H. A read cycle with A1=VIL, A0=VIH returns the device code of DAH/22DAH for MX29LV800(A)T, 5BH/225BH for MX29LV800(A)B.
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TABLE 7. SILICON ID CODE
Pins Manufacture code A0 VIL VIL VIH VIH VIH VIH X X A1 VIL VIL VIL VIL VIL VIL VIH VIH Q15~Q8 00H X 22H X 22H X X X Q7 1 1 1 1 0 0 0 0 Q6 1 1 1 1 1 1 0 0 Q5 0 0 0 0 0 0 0 0 Q4 0 0 1 1 1 1 0 0 Q3 0 0 1 1 1 1 0 0 Q2 0 0 0 0 0 0 0 0 Q1 1 1 1 1 1 1 0 0 Q0 0 0 0 0 1 1 1 0 Code (Hex) 00C2H C2H 22DAH DAH 225BH 5BH 01H (Protected) 00H (Unprotected)
Word Byte Device code Word for MX29LV800(A)T Byte Device code Word for MX29LV800(A)B Byte Sector Protection Word Verification Byte
READING ARRAY DATA
The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Automatic Program or Automatic Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See Erase Suspend/Erase Resume Commands" for more information on this mode. The system must issue the reset command to re-enable the device for reading array data if Q5 goes high, or while in the autoselect mode. See the "Reset Command" section, next.
RESET COMMAND
Writing the reset command to the device resets the device to reading array data. Address bits are don't care for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an SILICON ID READ command sequence. Once in the SILICON ID READ mode, the reset command must be written to return to reading array data (also applies to SILICON ID READ during Erase Suspend). If Q5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend).
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SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Sector Erase Set-up command and Automatic Sector Erase command. Upon executing the Automatic Sector Erase command, the device will automatically program and verify the sector(s) memory for an all-zero data pattern. The system is not required to provide any control or timing during these operations. When the sector(s) is automatically verified to contain an all-zero pattern, a self-timed sector erase and verify begin. The erase and verify operations are complete when either the data on Q7 is "1" at which time the device returns to the Read mode, or the data on Q6 stops toggling for two consecutive read cycles at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations. When using the Automatic sector Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verification command is required). Sector erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the set-up command 80H. Two more "unlock" write cycles are then followed by the sector erase command 30H. The sector address is latched on the falling edge of WE or CE, whichever happens later, while the command (data) is latched on the rising edge of WE or CE, whichever happens first. Sector addresses selected are loaded into internal register on the sixth falling edge of WE or CE, whichever happens later. Each successive sector load cycle started by the falling edge of WE or CE, whichever happens later must begin within 50us from the rising edge of the preceding WE or CE, whichever happens first. Otherwise, the loading period ends and internal auto sector erase cycle starts. (Monitor Q3 to determine if the sector erase timer window is still open, see section Q3, Sector Erase Timer.) Any command other than Sector Erase (30H) or Erase Suspend (B0H) during the time-out period resets the device to read mode.
device requires a maximum 20us to suspend the sector erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After this command has been executed, the command register will initiate erase suspend mode. The state machine will return to read mode automatically after suspend is ready. At this time, state machine only allows the command register to respond to Erase Resume, program data to , or read data from any sector not selected for erasure. The system can determine the status of the program operation using the Q7 or Q6 status bits, just as in the standard program operation. After an erase-suspend program operation is complete, the system can once again read array data within non-suspended sectors.
ERASE RESUME
This command will cause the command register to clear the suspend state and return back to Sector Erase mode but only if an Erase Suspend command was previously issued. Erase Resume will not have any effect in all other conditions. Another Erase Suspend command can be written after the chip has resumed erasing. However, a delay time must be required after the erase resume command (10ms for MX29LV800T/B and 1.5ms for MX29LV800AT/AB), if the system implements an endless erase suspend/resume loop, or the number of erase suspend/resume is exceeded 1024 times. The erase times will be expended if the erase behavior always be suspended. (Please refer to MXIC Flash Application Note for details.)
WORD/BYTE PROGRAM COMMAND SEQUENCE
The device programs one byte of data for each program operation. The command sequence requires four bus cycles, and is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 1 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, the device then returns to reading array data and
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ERASE SUSPEND
This command only has meaning while the state machine is executing Automatic Sector Erase operation, and therefore will only be responded during Automatic Sector Erase operation. When the Erase Suspend Command is issued during the sector erase operation, the
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addresses are no longer latched. The system can determine the status of the program operation by using Q7, Q6, or RY/BY. See "Write Operation Status" for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operation. The Byte Program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a "0" back to a "1". Attempting to do so may halt the operation and set Q5 to "1" ," or cause the Data Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still "0". Only erase operations can convert a "0" to a "1".
rithm is complete, or if the device enters the Erase Suspend mode, Data Polling produces a "1" on Q7. This is analogous to the complement/true datum out-put described for the Automatic Program algorithm: the erase function changes all the bits in a sector to "1" prior to this, the device outputs the "complement," or "0"." The system must provide an address within any of the sectors selected for erasure to read valid status information on Q7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data Polling on Q7 is active for approximately 100 us, then the device returns to reading array data. If not all selected sectors are protected, the Automatic Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. When the system detects Q7 has changed from the complement to true data, it can read valid data at Q7-Q0 on the following read cycles. This is because Q7 may change asynchronously with Q0-Q6 while Output Enable (OE) is asserted low.
WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/ BY. Table 10 and the following subsections describe the functions of these bits. Q7, RY/BY, and Q6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first.
RY/BY : Ready/Busy
The RY/BY is a dedicated, open-drain output pin that indicates whether an Automatic Erase/Program algorithm is in progress or complete. The RY/BY status is valid after the rising edge of the final WE or CE, whichever happens first, in the command sequence. Since RY/BY is an open-drain output, several RY/BY pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode. Table 8 shows the outputs for RY/BY during write operation.
Q7: Data Polling
The Data Polling bit, Q7, indicates to the host system whether an Automatic Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data Polling is valid after the rising edge of the final WE pulse in the program or erase command sequence. During the Automatic Program algorithm, the device outputs on Q7 the complement of the datum programmed to Q7. This Q7 status also applies to programming during Erase Suspend. When the Automatic Program algorithm is complete, the device outputs the datum programmed to Q7. The system must provide the program address to read valid status information on Q7. If a program address falls within a protected sector, Data Polling on Q7 is active for approximately 1 us, then the device returns to reading array data. During the Automatic Erase algorithm, Data Polling produces a "0" on Q7. When the Automatic Erase algoP/N:PM0709
Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE or CE, whichever
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happens first, in the command sequence (prior to the program or erase operation), and during the sector timeout. During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6 to toggle. The system may use either OE or CE to control the read cycles. When the operation is complete, Q6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, Q6 toggles and returns to reading array data. If not all selected sectors are protected, the Automatic Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use Q6 and Q2 together to determine whether a sector is actively erasing or is erase suspended. When the device is actively erasing (that is, the Automatic Erase algorithm is in progress), Q6 toggling. When the device enters the Erase Suspend mode, Q6 stops toggling. However, the system must also use Q2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use Q7. If a program address falls within a protected sector, Q6 toggles for approximately 2 us after the program command sequence is written, then returns to reading array data. Q6 also toggles during the erase-suspend-program mode, and stops toggling once the Automatic Program algorithm is complete. Table 8 shows the outputs for Toggle Bit I on Q6.
parison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sectors and mode information. Refer to Table 8 to compare outputs for Q2 and Q6.
Reading Toggle Bits Q6/ Q2
Whenever the system initially begins reading toggle bit status, it must read Q7-Q0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on Q7-Q0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high (see the section on Q5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as Q5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that system initially determines that the toggle bit is toggling and Q5 has not gone high. The system may continue to monitor the toggle bit and Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation.
Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates whether a particular sector is actively erasing (that is, the Automatic Erase algorithm is in process), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE or CE, whichever happens first, in the command sequence. Q2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE or CE to control the read cycles.) But Q2 cannot distinguish whether the sector is actively erasing or is erase-suspended. Q6, by comP/N:PM0709
Q5 Exceeded Timing Limits
Q5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under these conditions Q5 will produce a "1". This time-out condition indicates that the program or erase cycle was not successfully completed. Data Polling and Toggle Bit are the only operating functions of the device under this condition.
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If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors. Write the Reset command sequence to the device, and then execute program or erase command sequence. This allows the system to continue to use the other active sectors in the device. If this time-out condition occurs during the chip erase operation, it specifies that the entire chip is bad or combination of sectors are bad.
If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector may not be reused, (other sectors are still functional and can be reused). The time-out condition will not appear if a user tries to program a non blank location without erasing. Please note that this is not a device failure condition since the device was incorrectly used.
TABLE 8. WRITE OPERATION STATUS
Status Byte Program in Auto Program Algorithm Auto Erase Algorithm Erase Suspend Read (Erase Suspended Sector) In Progress Erase Suspended Mode Erase Suspend Read (Non-Erase Suspended Sector) Erase Suspend Program Byte Program in Auto Program Algorithm Exceeded Time Limits Auto Erase Algorithm Erase Suspend Program Data Q7 Q7 0 Q7 Data Toggle Toggle Toggle Toggle Data Data Data 0 1 1 1 N/A N/A 1 N/A N/A No Toggle Toggle N/A 1 0 0 0 0 Q7 (Note1) Q7 0 1 Q6 Toggle Toggle No Toggle Q5 Q3 (Note2) 0 0 0 N/A 1 Q2 No Toggle Toggle RY/BY 0 0 1
N/A Toggle
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits. See "Q5:Exceeded Timing Limits " for more information.
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Q3 Sector Erase Timer
After the completion of the initial sector erase command sequence, the sector erase time-out will begin. Q3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase command sequence. If Data Polling or the Toggle Bit indicates the device has been written with a valid erase command, Q3 may be used to determine if the sector erase timer window is still open. If Q3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit. If Q3 is low ("0"), the device will accept additional sector erase commands. To insure the command has been accepted, the system software should check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the second status check, the command may not have been accepted.
POWER SUPPLY DECOUPLING In order to reduce power switching effect, each device should have a 0.1uF ceramic capacitor connected between its VCC and GND.
POWER-UP SEQUENCE
The MX29LV800T/B & MX29LV800AT/AB powers up in the Read only mode. In addition, the memory contents may only be altered after successful completion of the predefined command sequences.
TEMPORARY SECTOR UNPROTECTED
This feature allows temporary unprotected of previously protected sector to change data in-system. The Temporary Sector Unprotected mode is activated by setting the RESET pin to VID(11.5V-12.5V). During this mode, formerly protected sectors can be programmed or erased as un-protected sector. Once VID is remove from the RESET pin, all the previously protected sectors are protected again.
DATA PROTECTION
The MX29LV800T/B & MX29LV800AT/AB is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. During power up the device automatically resets the state machine in the Read mode. In addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from VCC power-up and power-down transition or system noise.
SECTOR PROTECTION
The MX29LV800T/B & MX29LV800AT/AB features hardware sector protection. This feature will disable both program and erase operations for these sectors protected. To activate this mode, the programming equipment must force VID on address pin A9 and OE (suggest VID = 12V). Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated on the rising edge. Please refer to sector protect algorithm and waveform. To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9 ( with CE and OE at VIL and WE at VIH). When A1=VIH, A0=VIL, A6=VIL, it will produce a logical "1" code at device output Q0 for a protected sector. Otherwise the device will produce 00H for the unprotected sector. In this mode, the addresses, except for A1, are don't care. Address locations with A1 = VIL are reserved to read manufacturer and device codes. (Read Silicon ID) It is also possible to determine if the sector is protected in the system by writing a Read Silicon ID command. Performing a read operation with A1=VIH, it will produce a logical "1" at Q0 for the protected sector.
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WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns(typical) on CE or WE will not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE = VIL, CE = VIH or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one.
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CHIP UNPROTECTED
The MX29LV800T/B & MX29LV800AT/AB also features the chip unprotected mode, so that all sectors are unprotected after chip unprotected is completed to incorporate any changes in the code. It is recommended to protect all sectors before activating chip unprotected mode. To activate this mode, the programming equipment must force VID on control pin OE and address pin A9. The CE pins must be set at VIL. Pins A6 must be set to VIH. Refer to chip unprotected algorithm and waveform for the chip unprotected algorithm. The unprotection mechanism begins on the falling edge of the WE pulse and is terminated on the rising edge. It is also possible to determine if the chip is unprotected in the system by writing the Read Silicon ID command. Performing a read operation with A1=VIH, it will produce 00H at data outputs (Q0-Q7) for an unprotected sector. It is noted that all sectors are unprotected after the chip unprotected algorithm is completed.
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ABSOLUTE MAXIMUM RATINGS
Storage Temperature Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC Ambient Temperature with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V A9, OE, and RESET (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V Output Short Circuit Current (Note 3) . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 6. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. 2. Minimum DC input voltage on pins A9, OE, and RESET is -0.5 V. During voltage transitions, A9, OE, and RESET may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 6. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
OPERATING RATINGS
Commercial (C) Devices C Ambient Temperature (TA ). . . . . . . . . . . . 0C to +70 Industrial (I) Devices Ambient Temperature (TA ). . . . . . . . . . -40 to +85C C VCC Supply Voltages VCC for regulated voltage range . . . . . +3.0 V to 3.6 V VCC for full voltage range. . . . . . . . . . . +2.7 V to 3.6 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
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CAPACITANCE TA = 25oC, f = 1.0 MHz
SYMBOL CIN1 CIN2 COUT PARAMETER Input Capacitance Control Pin Capacitance Output Capacitance MIN. TYP MAX. 8 12 12 UNIT pF pF pF CONDITIONS VIN = 0V VIN = 0V VOUT = 0V
TABLE 9. DC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V
Symbol ILI ILIT ILO ICC1 PARAMETER Input Leakage Current A9 Input Leakage Current Output Leakage Current VCC Active Read Current 7 2 7 2 ICC2 ICC3 ICC4 VCC Active write Current VCC Standby Current VCC Standby Current During Reset ICC5 VIL VIH VID Automatic sleep mode Input Low Voltage(Note 1) Input High Voltage Voltage for Automatic Select and Temporary Sector Unprotected VOL VOH1 VOH2 Output Low Voltage Output High Voltage(TTL) Output High Voltage (CMOS) 0.85xVCC VCC-0.4 0.45 V IOL = 4.0mA, VCC= VCC min IOH = -2mA, VCC=VCC min IOH = -100uA, VCC min 11.5 12.5 V VCC=3.3V -0.5 0.7xVCC 0.2 5 0.8 VCC+ 0.3 uA V V VIH=VCC 0.3V;VIL=VSS 0.3V 15 0.2 0.2 MIN. TYP MAX. 1 35 1 12 4 12 4 30 5 5 UNIT uA uA uA mA mA mA mA mA uA uA CONDITIONS VIN = VSS to VCC VCC=VCC max; A9=12.5V VOUT = VSS to VCC, VCC=VCC max CE=VIL, OE=VIH (Byte Mode) CE=VIL, OE=VIH (Word Mode) CE=VIL, OE=VIH CE; RESET=VCC 0.3V RESET=VSS 0.3V @5MHz @1MHz @5MHz @1MHz
NOTES: 1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns. VIL min. = -2.0V for pulse width is equal to or less than 20 ns. 2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns If VIH is over the specified maximum value, read operation cannot be guaranteed. 3. Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns.
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AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V TABLE 10. READ OPERATIONS
29LV800(A)T/B-70(R) 29LV800(A)T/B-90 SYMBOL PARAMETER tRC tACC tCE tOE tDF tOEH Read Cycle Time (Note 1) Address to Output Delay CE to Output Delay OE to Output Delay OE High to Output Float (Note1) Output Enable Read Hold Time tOH 0 0 MIN. MAX. 70 70 70 30 25 0 0 10 0 NOTE: MIN. MAX. 90 90 90 35 30 UNIT ns ns ns ns ns ns ns ns CE=OE=VIL CE=OE=VIL OE=VIL CE=VIL CE=VIL CONDITIONS
Toggle and Data Polling 10 0
Address to Output hold
TEST CONDITIONS:
* Input pulse levels: 0V/3.0V. * Input rise and fall times is equal to or less than 5ns. * Output load: 1 TTL gate + 100pF (Including scope and jig), for 29LV800T/B-90. 1 TTL gate + 30pF (Including scope and jig) for 29LV800T/B-70 and 29LV800T/B70R. * Reference levels for measuring timing: 1.5V.
1. Not 100% tested. 2. tDF is defined as the time at which the output achieves the open circuit condition and data is no longer driven. 3. 29LV800T/B-70R operates at VCC=3.0V~3.6V
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SWITCHING TEST CIRCUITS
DEVICE UNDER TEST
2.7K ohm +3.3V
CL
6.2K ohm
DIODES=IN3064 OR EQUIVALENT
CL= 100pF Including jig capacitance (30pF for MX29LV800T/B-70 & MX29LV800T/B-70R)
SWITCHING TEST WAVEFORMS
3.0V TEST POINTS 0V INPUT
OUTPUT
AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0". Input pulse rise and fall times are < 5ns.
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 1. READ TIMING WAVEFORMS
tRC VIH
Addresses
VIL
ADD Valid
tACC tCE
CE
VIH VIL
WE
VIH VIL tOEH VIH
tOE
tDF
OE
VIL tACC tOH
Outputs
VOH VOL
HIGH Z
DATA Valid
HIGH Z
VIH
RESET
VIL
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MX29LV800T/B & MX29LV800AT/AB
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V TABLE 11. Erase/Program Operations
29LV800(A)T/B-70 (R) 29LV800(A)T/B-90 SYMBOL tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tRB tBUSY tWPP1 tWPP2 tBAL
NOTES:
PARAMETER Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write (OE High to WE Low) CE Setup Time CE Hold Time Write Pulse Width Write Pulse Width High Programming Operation (Note 2) (Byte/Word program time) Sector Erase Operation (Note 2) VCC Setup Time (Note 1) Recovery Time from RY/BY Program/Erase Vaild to RY/BY Delay Write Pulse Width for Sector Protect (A9, OE Control) Write Pulse Width for Sector Unprotected (A9, OE Control) Sector Address Load Time
MIN. 70 0 45 35 0 0 0 0 0 35 30 9/11(TYP.) 0.7(TYP.) 50 0
MAX.
MIN. 90 0 45 45 0 0 0 0 0 35 30 9/11(TYP.) 0.7(TYP.) 50 0
MAX.
UNIT ns ns ns ns ns ns ns ns ns ns ns us sec us ns
90 100ns 100ns 10us (Typ.) 12ms (Typ.) 50 100ns 100ns
90 10us (Typ.) 12ms (Typ.) 50
ns
us
1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. 3. 29LV800T/B-70R operates at VCC=3.0V~3.6V.
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MX29LV800T/B & MX29LV800AT/AB
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V TABLE 12. Alternate CE Controlled Erase/Program Operations
29LV800(A)T/B-70 (R) 29LV800(A)T/B-90 SYMBOL tWC tAS tAH tDS tDH tOES tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2
NOTE:
PARAMETER Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write WE Setup Time WE Hold Time CE Pulse Width CE Pulse Width High Programming Operation(note2) Byte Word
MIN. 70 0 45 35 0 0 0 0 0 35 30 9(Typ.) 11(Typ.) 0.7(Typ.)
MAX.
MIN. 90 0 45 45 0 0 0 0 0 35 30 9(Typ.) 11(Typ.)
MAX.
UNIT ns ns ns ns ns ns ns ns ns ns ns us us sec
Sector Erase Operation (note2)
0.7(Typ.)
1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. 3. 29LV800T/B-70R operates at VCC=3.0V~3.6V
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 2. COMMAND WRITE TIMING WAVEFORM
VCC
3V
Addresses
VIH
ADD Valid
VIL tAS tAH
WE
VIH VIL tOES tWPH tCWC
tWP
CE
VIH VIL tCS tCH
OE
VIH VIL VIH tDS tDH
Data
VIL
DIN
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MX29LV800T/B & MX29LV800AT/AB
AUTOMATIC PROGRAMMING TIMING WAVEFORM
One byte data is programmed. Verify in fast algorithm and additional verification by external control are not required because these operations are executed automatically by internal control circuit. Programming completion can be verified by DATA polling and toggle bit checking after automatic programming starts. Device outputs DATA during programming and DATA after programming on Q7. (Q6 is for toggle bit; see toggle bit, DATA polling, timing waveform)
FIGURE 3. AUTOMATIC PROGRAMMING TIMING WAVEFORM
Program Command Sequence(last two cycle)
tWC tAS
Read Status Data (last two cycle)
Address
555h
PA
tAH
PA
PA
CE
tCH tGHWL
OE
tWP
tWHWH1
WE
tCS tDS tDH
tWPH
A0h Data
PD
Status
DOUT
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES: 1.PA=Program Address, PD=Program Data, DOUT is the true data the program address
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 4. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data A0H Address 555H
Write Program Data/Address
Increment Address
Data Poll from system
No Verify Word Ok ?
YES
No Last Address ?
YES
Auto Program Completed
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 5. CE CONTROLLED PROGRAM TIMING WAVEFORM
PA for program SA for sector erase 555 for chip erase
555 for program 2AA for erase
Data Polling Address
tWC tWH tAS tAH
PA
WE
tGHEL
OE
tCP tWHWH1 or 2
CE
tWS tDS tDH
tCPH tBUSY
DQ7 DOUT Data
tRH A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase
RESET
RY/BY
NOTES: 1.PA=Program Address, PD=Program Data, DOUT=Data Out, DQ7=complement of data written to device. 2.Figure indicates the last two bus cycles of the command sequence.
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MX29LV800T/B & MX29LV800AT/AB
AUTOMATIC CHIP ERASE TIMING WAVEFORM
All data in chip are erased. External erase verification is not required because data is verified automatically by internal control circuit. Erasure completion can be verified by DATA polling and toggle bit checking after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7. (Q6 is for toggle bit; see toggle bit, DATA polling, timing waveform)
FIGURE 6. AUTOMATIC CHIP ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC tAS
Read Status Data
Address
2AAh
555h
tAH
VA
VA
CE
tCH tGHWL
OE
tWP
tWHWH2
WE
tCS tDS tDH
tWPH
55h Data
10h
In Progress Complete
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES: SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 7. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 10H Address 555H
Data Pall from System
NO
Data=FFh ?
YES
Auto Chip Erase Completed
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MX29LV800T/B & MX29LV800AT/AB
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector indicated by A12 to A18 are erased. External erase verify is not required because data are verified automatically by internal control circuit. Erasure completion can be verified by DATA polling and toggle bit checking after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7. (Q6 is for toggle bit; see toggle bit, DATA polling, timing waveform)
FIGURE 8. AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC tAS
Read Status Data
Address
2AAh
Sector Address 0
tAH
Sector Address 1
Sector Address n
VA
VA
CE
tCH tGHWL
OE
tBAL tWHWH2
tWP
WE
tCS tDS tDH
tWPH
55h Data
30h
30h
30h
In Progress Complete
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES: SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 9. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 30H Sector Address
Last Sector to Erase YES Data Poll from System
NO
Data=FFh
NO
YES
Auto Sector Erase Completed
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 10. ERASE SUSPEND/ERASE RESUME FLOWCHART
START
Write Data B0H
ERASE SUSPEND Toggle Bit checking Q6 not toggled YES Read Array or Program NO
Reading or Programming End YES Write Data 30H
NO
Delay Time (Note 2) ERASE RESUME Continue Erase
Another Erase Suspend ? YES
NO
Note: 1. If the system implements an endless erase suspend/resume loop, or the number of erase suspend/resume is exceeded 1024 times, then the delay time must be put into consideration. 2. Delay timing: 10ms for MX29LV800T/B, 1.5ms for MX29LV800AT/AB.
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 11. IN-SYSTEM SECTOR PROTECT/UNPROTECTED TIMING WAVEFORM (RESET Control)
VID VIH
RESET
SA, A6 A1, A0
Valid*
Valid*
Valid*
Sector Protect or Sector Unprotect Data
1us
Verify 40h Status
60h
60h
Sector Protect =150us Sector Unprotect =15ms
CE
WE
OE
Note: When sector protect, A6=0, A1=1, A0=0. When sector unprotect, A6=1, A1=1, A0=0.
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 12. SECTOR PROTECT TIMING WAVEFORM (A9, OE Control)
A1
A6
12V 3V A9
tVLHT Verify
12V 3V OE
tVLHT tWPP 1 tVLHT
WE
tOESP
CE
Data
tOE
01H
F0H
A18-A12
Sector Address
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 13. SECTOR PROTECTION ALGORITHM (A9, OE Control)
START
Set Up Sector Addr
PLSCNT=1
OE=VID,A9=VID,CE=VIL A6=VIL
Activate WE Pulse
Time Out 150us
Set WE=VIH, CE=OE=VIL A9 should remain VID
.
No
Read from Sector Addr=SA, A1=1
PLSCNT=32?
No
Data=01H?
Yes Device Failed
Protect Another Sector?
Yes
Remove VID from A9 Write Reset Command
Sector Protection Complete
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 14. IN-SYSTEM SECTOR PROTECTION ALGORITHM WITH RESET=VID
START
PLSCNT=1
RESET=VID
Wait 1us
First Write Cycle=60H Yes Set up sector address
No
Temporary Sector Unprotect Mode
Write 60H to sector address with A6=0, A1=1, A0=0
Wait 150us
Increment PLSCNT
Verify sector protect : write 40H with A6=0, A1=1, A0=0
Reset PLSCNT=1
Read from sector address No No Data=01H ?
PLSCNT=25?
Yes Device failed
Yes
Protect another sector? No Remove VID from RESET
Yes
Write reset command
Sector protect complete
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 15. IN-SYSTEM SECTOR UNPROTECTION ALGORITHM WITH RESET=VID
START
PLSCNT=1
RESET=VID
Wait 1us
First Write Cycle=60H ? Yes
No
Temporary Sector Unprotect Mode
All sector protected? Yes Set up first sector address
No
Protect all sectors
Sector unprotect : write 60H with A6=1, A1=1, A0=0
Wait 50ms
Increment PLSCNT
Verify sector unprotect write 40H to sector address with A6=1, A1=1, A0=0
Read from sector address with A6=1, A1=1, A0=0 No No Data=00H ?
PLSCNT=1000?
Set up next sector address
Yes Device failed
Yes
Last sector verified? No Remove VID from RESET
Yes
Write reset command
Sector unprotect complete
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 16. TIMING WAVEFORM FOR CHIP UNPROTECTION (A9, OE Control)
A1
12V Vcc 3V A9
tVLHT
A6
Verify
12V Vcc 3V OE
tVLHT tWPP 2 tVLHT
WE
tOESP
CE
Data
tOE
00H
F0H
A18-A12
Sector Address
Notes: tVLHT (Voltage transition time)=4us min. tWPP1 (Write pulse width for sector protect)=100ns min, 10us(Typ.) tWPP2 (Write pulse width for sector unprotected)=100ns min, 12ms(Typ.) tOESP (OE setup time to WE active)=4us min.
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 17. CHIP UNPROTECTION ALGORITHM (A9, OE Control)
START
Protect All Sectors
PLSCNT=1
Set OE=A9=VID CE=VIL,A6=1
Activate WE Pulse
Time Out 50ms
Increment PLSCNT
Set OE=CE=VIL A9=VID,A1=1
Set Up First Sector Addr
Read Data from Device No
Increment Sector Addr
Data=00H?
No PLSCNT=1000?
Yes No
Yes Device Failed
All sectors have been verified? Yes Remove VID from A9 Write Reset Command
Chip Unprotect Complete
* It is recommended before unprotect whole chip, all sectors should be protected in advance.
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MX29LV800T/B & MX29LV800AT/AB
WRITE OPERATION STATUS FIGURE 18. DATA POLLING ALGORITHM
Start
Read Q7~Q0 Add.=VA(1)
Q7 = Data ?
Yes
No No
Q5 = 1 ?
Yes Read Q7~Q0 Add.=VA
Q7 = Data ? (2) No FAIL
Yes
Pass
NOTE : 1.VA=Valid address for programming 2.Q7 should be re-checked even Q5="1" because Q7 may change simultaneously with Q5.
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 19. TOGGLE BIT ALGORITHM
Start
Read Q7-Q0
Read Q7-Q0
(Note 1)
Toggle Bit Q6 = Toggle ?
NO
YES
NO Q5= 1?
YES
Read Q7~Q0 Twice
(Note 1,2)
Toggle bit Q6= Toggle?
NO
YES
Program/Erase Operation Not Complete,Write Reset Command
Program/Erase operation Complete
Note:1.Read toggle bit twice to determine whether or not it is toggling. 2. Recheck toggle bit because it may stop toggling as Q5 change to "1".
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 20. Data Polling Timings (During Automatic Algorithms)
tRC
Address
VA
tACC tCE
VA
VA
CE
tCH tOE
OE
tOEH tDF
WE
tOH
DQ7 Q0-Q6
tBUSY
Complement
Complement
True
Valid Data
High Z
Status Data
Status Data
True
Valid Data
High Z
RY/BY
NOTES: 1. VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle. 2. CE must be toggled when DATA polling.
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 21. Toggle Bit Timings (During Automatic Algorithms)
tRC
Address
VA
tACC tCE
VA
VA
VA
CE
tCH tOE
OE
tOEH tDF
WE
tOH
Q6/Q2
High Z
Valid Status (first raed)
Valid Status (second read)
Valid Data (stops toggling)
Valid Data
tBUSY
RY/BY
NOTES: 1. VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and array data read cycle. 2. CE must be toggled when toggle bit toggling.
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MX29LV800T/B & MX29LV800AT/AB
TABLE 13. AC CHARACTERISTICS
Parameter Std tREADY1 Description RESET PIN Low (During Automatic Algorithms) to Read or Write (See Note) tREADY2 RESET PIN Low (NOT During Automatic Algorithms) to Read or Write (See Note) tRP tRH tRB RESET Pulse Width (During Automatic Algorithms) RESET High Time Before Read (See Note) RY/BY Recovery Time (to CE, OE go low) MIN MIN MIN 500 50 0 ns ns ns MAX 500 ns Test Setup All Speed Options Unit MAX 20 us
Note: Not 100% tested
FIGURE 22. RESET TIMING WAVEFORM
RY/BY
CE, OE
tRH
RESET
tRP tReady2
Reset Timing NOT during Automatic Algorithms
tReady1
RY/BY
tRB
CE, OE
RESET
tRP
Reset Timing during Automatic Algorithms
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MX29LV800T/B & MX29LV800AT/AB
AC CHARACTERISTICS TABLE 14. WORD/BYTE CONFIGURATION (BYTE)
Parameter JEDEC Std tELFL/tELFH tFLQZ tFHQV CE to BYTE Switching Low or High BYTE Switching Low to Output HIGH Z BYTE Switching High to Output Active Max Max Min 25 70 Description Speed Options -70 (R) 5 30 90 -90 ns ns ns Unit
FIGURE 23.
BYTE TIMING WAVEFORM FOR READ OPERATIONS (BYTE switching from byte mode to word mode)
CE
OE
tELFH
BYTE
Q0~Q14
DOUT (Q0-Q7)
DOUT (Q0-Q14)
Q15/A-1
VA tFHQV
DOUT (Q15)
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 24.
BYTE TIMING WAVEFORM FOR READ OPERATIONS (BYTE switching from word mode to byte mode)
CE
OE
tELFH
BYTE
Q0~Q14
DOUT (Q0-Q14)
DOUT (Q0-Q7)
Q15/A-1
DOUT (Q15) tFLQZ
VA
FIGURE 25.
BYTE TIMING WAVEFORM FOR PROGRAM OPERATIONS
CE
The falling edge of the last WE signal
WE
BYTE
tAS tAH
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MX29LV800T/B & MX29LV800AT/AB
TABLE 15. TEMPORARY SECTOR UNPROTECTED
Parameter Std. Description tVIDR tRSP Note: Not 100% tested VID Rise and Fall Time (See Note) RESET Setup Time for Temporary Sector Unprotected Test Setup All Speed Options Unit Min Min 500 4 ns us
FIGURE 26. TEMPORARY SECTOR UNPROTECTED TIMING DIAGRAM
12V
RESET
0 or Vcc Program or Erase Command Sequence 0 or Vcc tVIDR
tVIDR
CE
WE
tRSP
RY/BY
FIGURE 27. Q6 vs Q2 for Erase and Erase Suspend Operations
Enter Embedded Erasing Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Suspend Read Erase Resume Erase Erase Complete
WE
Q6
Q2
NOTES: The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 28. TEMPORARY SECTOR UNPROTECTED ALGORITHM
Start
RESET = VID (Note 1) Perform Erase or Program Operation Operation Completed RESET = VIH Temporary Sector Unprotect Completed(Note 2)
Note : 1. All protected sectors are temporary unprotected. VID=11.5V~12.5V 2. All previously protected sectors are protected again.
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MX29LV800T/B & MX29LV800AT/AB
FIGURE 29. ID CODE READ TIMING WAVEFORM
VCC
3V VID VIH VIL
VIH VIL tACC VIH tACC
ADD A9
ADD A0
A1
VIL
ADD A2-A8 A10-A18 CE
VIH VIL
VIH VIL
WE
VIH VIL
tCE
OE
VIH VIL
tOE tDF tOH tOH
VIH
DATA Q0-Q15
DATA OUT
VIL
DATA OUT DAH/5BH (Byte) 22DAH/225BH (Word)
C2H/00C2H
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MX29LV800T/B & MX29LV800AT/AB
TABLE 16. ERASE AND PROGRAMMING PERFORMANCE (1)
PARAMETER
Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time Byte Mode Word Mode Erase/Program Cycles 100,000
MIN.
LIMITS TYP.(2)
0.7 14 9 11 9 5.8
MAX.(3)
15
UNITS
sec sec
300 360 27 17
us us sec sec Cycles
Note:
1. Not 100% Tested, Excludes external system level over head. 2. Typical values measured at 25C, 3V. 3. Maximum values measured at 25 2.7V. C,
TABLE 17. LATCH-UP CHARACTERISTICS
MIN. Input Voltage with respect to GND on all pins except I/O pins Input Voltage with respect to GND on all I/O pins Current Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time. -1.0V -1.0V -100mA MAX. 12.5V Vcc + 1.0V +100mA
TABLE 18. DATA RETENTION
Parameter Description Test Conditions 150 C Data Retention Time 125 C 20 Years Min 10 Unit Years
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MX29LV800T/B & MX29LV800AT/AB
ORDERING INFORMATION
PLASTIC PACKAGE PART NO. MX29LV800TMC-70 MX29LV800BMC-70 MX29LV800TMC-90 MX29LV800BMC-90 MX29LV800TTC-70 MX29LV800TTC-70R MX29LV800BTC-70 MX29LV800BTC-70R MX29LV800TTC-90 MX29LV800BTC-90 MX29LV800TXBC-70 MX29LV800TXBC-90 MX29LV800BXBC-70 MX29LV800BXBC-90 MX29LV800TMI-70 MX29LV800BMI-70 MX29LV800TMI-90 MX29LV800BMI-90 MX29LV800TTI-70 MX29LV800TTI-70R MX29LV800BTI-70 MX29LV800BTI-70R MX29LV800TTI-90 MX29LV800BTI-90 ACCESS TIME (ns) 70 70 90 90 70 70 70 70 90 90 70 90 70 90 70 70 90 90 70 70 70 70 90 90 OPERATING Current MAX. (mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 STANDBY Current MAX. (uA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 PACKAGE 44 Pin SOP 44 Pin SOP 44 Pin SOP 44 Pin SOP 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 44 Pin SOP 44 Pin SOP 44 Pin SOP 44 Pin SOP 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) Remark
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MX29LV800T/B & MX29LV800AT/AB
PART NO. MX29LV800TXBI-70 MX29LV800TXBI-90 MX29LV800BXBI-70 MX29LV800BXBI-90 MX29LV800TTC-70G MX29LV800BTC-70G MX29LV800TTC-90G MX29LV800BTC-90G MX29LV800TXBC-70G MX29LV800TXBC-90G MX29LV800BXBC-70G MX29LV800BXBC-90G MX29LV800TTI-70G MX29LV800BTI-70G MX29LV800TTI-90G MX29LV800BTI-90G MX29LV800TXBI-70G MX29LV800TXBI-90G MX29LV800BXBI-70G MX29LV800BXBI-90G
ACCESS TIME (ns) 70 90 70 90 70 70 90 90 70 90 70 90 70 70 90 90 70 90 70 90
OPERATING Current MAX. (mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30
STANDBY Current MAX. (uA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
PACKAGE 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm)
Remark
PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free
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56
MX29LV800T/B & MX29LV800AT/AB
PART NO. MX29LV800ATTC-70 MX29LV800ABTC-70 MX29LV800ATTC-90 MX29LV800ABTC-90 MX29LV800ATXBC-70 MX29LV800ATXBC-90 MX29LV800ABXBC-70 MX29LV800ABXBC-90 MX29LV800ATXEC-70 MX29LV800ATXEC-90 MX29LV800ABXEC-70 MX29LV800ABXEC-90 MX29LV800ATTI-70 MX29LV800ABTI-70 MX29LV800ATTI-90 MX29LV800ABTI-90
ACCESS TIME (ns) 70 70 90 90 70 90 70 90 70 90 70 90 70 70 90 90
OPERATING Current MAX. (mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30
STANDBY Current MAX. (uA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
PACKAGE 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.4mm) 48 Ball CSP (Ball Size:0.4mm) 48 Ball CSP (Ball Size:0.4mm) 48 Ball CSP (Ball Size:0.4mm) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type)
Remark
P/N:PM0709
REV. 2.2, APR. 11, 2003
57
MX29LV800T/B & MX29LV800AT/AB
PART NO. MX29LV800ATXBI-70 MX29LV800ATXBI-90 MX29LV800ABXBI-70 MX29LV800ABXBI-90 MX29LV800ATXEI-70 MX29LV800ATXEI-90 MX29LV800ABXEI-70 MX29LV800ABXEI-90 MX29LV800ATTC-70G MX29LV800ABTC-70G MX29LV800ATTC-90G MX29LV800ABTC-90G MX29LV800ATXBC-70G MX29LV800ATXBC-90G MX29LV800ABXBC-70G MX29LV800ABXBC-90G MX29LV800ATXEC-70G MX29LV800ATXEC-90G MX29LV800ABXEC-70G MX29LV800ABXEC-90G
ACCESS TIME (ns) 70 90 70 90 70 90 70 90 70 70 90 90 70 90 70 90 70 90 70 90
OPERATING Current MAX. (mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30
STANDBY Current MAX. (uA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
PACKAGE 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.4mm) 48 Ball CSP (Ball Size:0.4mm) 48 Ball CSP (Ball Size:0.4mm) 48 Ball CSP (Ball Size:0.4mm) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.4mm) 48 Ball CSP (Ball Size:0.4mm) 48 Ball CSP (Ball Size:0.4mm) 48 Ball CSP (Ball Size:0.4mm)
Remark
PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free
P/N:PM0709
REV. 2.2, APR. 11, 2003
58
MX29LV800T/B & MX29LV800AT/AB
PART NO. MX29LV800ATTI-70G MX29LV800ABTI-70G MX29LV800ATTI-90G MX29LV800ABTI-90G MX29LV800ATXBI-70G MX29LV800ATXBI-90G MX29LV800ABXBI-70G MX29LV800ABXBI-90G MX29LV800ATXEI-70G MX29LV800ATXEI-90G MX29LV800ABXEI-70G MX29LV800ABXEI-90G
ACCESS TIME (ns) 70 70 90 90 70 90 70 90 70 90 70 90
OPERATING Current MAX. (mA) 30 30 30 30 30 30 30 30 30 30 30 30
STANDBY Current MAX. (uA) 5 5 5 5 5 5 5 5 5 5 5 5
PACKAGE 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.3mm) 48 Ball CSP (Ball Size:0.4mm) 48 Ball CSP (Ball Size:0.4mm) 48 Ball CSP (Ball Size:0.4mm) 48 Ball CSP (Ball Size:0.4mm)
Remark PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free PB free
P/N:PM0709
REV. 2.2, APR. 11, 2003
59
MX29LV800T/B & MX29LV800AT/AB
PACKAGE INFORMATION
P/N:PM0709
REV. 2.2, APR. 11, 2003
60
MX29LV800T/B & MX29LV800AT/AB
P/N:PM0709
REV. 2.2, APR. 11, 2003
61
MX29LV800T/B & MX29LV800AT/AB
48-Ball CSP (for MX29LV800ATXBC/ATXBI/ABXBC/ABXBI)
P/N:PM0709
REV. 2.2, APR. 11, 2003
62
MX29LV800T/B & MX29LV800AT/AB
48-Ball CSP (for MX29LV800TXBC/TXBI/BXBC/BXBI)
P/N:PM0709
REV. 2.2, APR. 11, 2003
63
MX29LV800T/B & MX29LV800AT/AB
48-Ball CSP (for MX29LV800ATXEC/ATXEI/ABXEC/ABXEI)
P/N:PM0709
REV. 2.2, APR. 11, 2003
64
MX29LV800T/B & MX29LV800AT/AB
REVISION HISTORY
Revision No. Description 1.0 Change heading as "PRELIMINARY" Correct mis-typing Changed tBUSY spec from 90us to 90ns Correct mis-typing tBUSY timing was changed from 90ns min. to 90ns max. Add protection waveform and flowchart(A9, OE control) Add BYTE timing waveform 1. Wording change of sector erase commands 2. Add the typical spec of tWPP1/tWPP2 Add MX29LV800TXEC & MX29LV800TXEI & MX29LV800BXEC & MX29LV800BXEI in Ordering Information Add 48-Ball CSP for MX29LV800TXEC/TXEI/BXEC/BXEI 1. Add 10ms time delay for erase suspend/resume 1. To cancel the VLKO function 2. To modify table 3. Autoselect Mode Operation 3. To added data retention information 4. To added ordering information 1. To added MX29LV800AT/AB information 1. Correct mis-typing 1. Added notes to define CE operation in Data polling timing waveform and toggle bit timing waveform 2. To redefine tCH timing to "between 90% of WE and 10% of CE rising" 1. Correct mis-typing 1. To removed "Preliminary" 2. To modify package information 3. To modify sector erase operation timing waveform and add tBAL timing in the Erase/Program AC table 1. Modify the erase suspend/resume delay timing of MX29LV800A from 10ms to 1.5ms 1. To modify the device size data of CFI table Page Date P1 JUL/31/2001 P10,19~22,24, 25,48 P24 P1,11,38,39, SEP/12/2001 44 P24 P36,37 P47,48 P11,13 NOV/23/2001 P24,40 P53,54 JAN/24/2002 P58 P13,34 P1,20 P7 P1,52 P54 All All P46,47
1.1
1.2 1.3
1.4 1.5
MAR/01/2002 APR/18/2002
1.6 1.7 1.8
APR/30/2002 MAY/31/2002 JUL/03/2002
P29,32,34,46,47 P8,9,18,22 P1 P60~64 P26,34 P15,36 P9 SEP/13/2002 NOV/19/2002
1.9 2.0
2.1 2.2
DEC/17/2002 APR/11/2003
P/N:PM0709
REV. 2.2, APR. 11, 2003
65
MX29LV800T/B & MX29LV800AT/AB
MACRONIX INTERNATIONAL CO., LTD.
HEADQUARTERS:
TEL:+886-3-578-6688 FAX:+886-3-563-2888
EUROPE OFFICE:
TEL:+32-2-456-8020 FAX:+32-2-456-8021
JAPAN OFFICE:
TEL:+81-44-246-9100 FAX:+81-44-246-9105
SINGAPORE OFFICE:
TEL:+65-348-8385 FAX:+65-348-8096
TAIPEI OFFICE:
TEL:+886-2-2509-3300 FAX:+886-2-2509-2200
MACRONIX AMERICA, INC.
TEL:+1-408-453-8088 FAX:+1-408-453-8488
CHICAGO OFFICE:
TEL:+1-847-963-1900 FAX:+1-847-963-1909
http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.

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